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Si4214DDY-T1-E3
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.10
I D = 8 A
10
1
0.1
0.01
0.001
T J = 150 °C
T J = 25 °C
0.0 8
0.06
0.04
0.02
0.00
T J = 125 °C
T J = 25 °C
0.0
0.2
0.4
0.6
0. 8
1.0
1.2
0
1
2
3
4
5
6
7
8
9
10
0.5
0.2
- 0.1
- 0.4
- 0.7
- 1.0
V SD - So u rce-to-Drain V oltage ( V )
Source-Drain Diode Forward Voltage
I D = 5 mA
I D = 250 μA
50
40
30
20
10
0
V GS - Gate-to-So u rce V oltage ( V )
On-Resistance vs. Gate-to-Source Voltage
- 50
- 25
0
25
50
75
100
125
150
0 . 0 0 1
0.01
0.1
1
1 0
T J - Temperat u re (°C)
Threshold Voltage
Time (s)
Single Pulse Power, Junction-to-Ambient
100
Limited by R DS(on) *
10
1 ms
1
0.1
10 ms
100 ms
1s
0.01
T A = 25 °C
Single P u lse
BVDSS Limited
10 s
DC
0.01
0.1
1
10
100
V DS - Drain-to-So u rce V oltage ( V )
* V GS > minim u m V GS at w hich R DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 67907
S11-0653-Rev. A, 11-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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